p-doping nitride simulator
Process analysis tool for p-doping of GaN and III-nitride materials.
Addressing the issue of p-type conductivity using the process simulator PROCOM for Metal-Organic Chemical Vapor Deposition (MOCVD). It is important to control the incorporation of Mg during film growth. The simulation assists in optimizing the complex doping processes and the MOCVD process. Different types of acceptors can also be simulated using this software.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
